AON2707 30v p-channel mosfet with schottky diode general description product summary v ds i d (at v gs =-10v) -4a r ds(on) (at v gs =-10v) < 117m w r ds(on) (at v gs =-4.5v) < 138m w r ds(on) (at v gs =-2.5v) < 193m w typical esd protection hbm class 2 v ka 20v i f 2a v f (at i f =1a) <0.45v the AON2707 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for dc-dc convers ion applications. -30v dfn 2x2 top view bottom view a nc k s g k d s g d k a symbol v ds v gs i dm v ka i fm t j , t stg symbol t 10s steady-state t 10s steady-state a v c/w maximum junction-to-ambient a 67 87 c/w maximum junction-to-ambient a r q ja 36 47 c/w maximum junction-to-ambient a 85 maximum junction-to-ambient a c/w 35 65 45 power dissipation a p d typ max -55 to 150 -55 to 150 2.8 2.7 1.8 1.7 schottky reverse voltage continuous forward current a t a =25c t a =70c r q ja gate-source voltage 12 t a =25c va -15 i d -4 -3 pulsed drain current b continuous drain current a v units parameter absolute maximum ratings t a =25c unless otherwise noted mosfet schottky drain-source voltage -30 20 2.5 parameter: schottky 1.5 pulsed forward current b 15 t a =70c junction and storage temperature range i f t a =70c c thermal characteristics units parameter: mosfet w t a =25c d s rev0: dec. 2012 www.aosmd.com page 1 of 6
AON2707 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.7 -1.05 -1.5 v i d(on) -15 a 97 117 t j =125c 138 165 110 138 m w 148 193 m w g fs 9 s v sd -0.8 -1 v i s -3.2 a c iss 305 pf c oss 42 pf c rss 26 pf r g 8.5 17 w q g(10v) 6.8 12 nc q g(4.5v) 3.2 6 nc q gs 0.75 nc q gd 1.2 nc t d(on) 6.0 ns t r 5 ns t 21 ns drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-4a reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters v ds =v gs, i d =-250 m a v ds =0v, v gs =12v gate-body leakage current forward transconductance r ds(on) i s =-1a,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current v ds =-5v, i d =-4a v gs =-2.5v, i d =-1a diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance dynamic parameters static drain-source on-resistance m w total gate charge v gs =-4.5v, i d =-2a turn-off delaytime v gs =-10v, v ds =-15v, r l =3.75 w , r =3 w gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-10v, v ds =-15v, i d =-4a gate source charge gate drain charge total gate charge turn-on delaytime t d(off) 21 ns t f 6.5 ns t rr 15 ns q rr 6 nc schottky parameters v f 0.4 0.45 v 0.05 10 0.1 20 c t 34 pf t rr 11 14 ns q rr 0.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-4a, di/dt=100a/ m s turn-off delaytime r gen =3 w turn-off fall time ma v r =5v, t j =125c body diode reverse recovery charge i f =-4a, di/dt=100a/ m s forward voltage drop i f =1a i rm maximum reverse leakage current v r =5v schottky reverse recovery charge i f =1a, di/dt=100a/ m s junction capacitance v r =10v schottky reverse recovery time i f =1a, di/dt=100a/ m s i rm maximum reverse leakage current v r =16v ma v r =16v, t j =125c a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. the current rating is base d on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junct ion temperature. c. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev0: dec. 2012 www.aosmd.com page 2 of 6
AON2707 typical electrical and thermal characteristics 0 5 10 15 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics -8.0v v gs = - 2v -6v -2.5v -4.5v -10v 0 2 4 6 8 10 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 0 50 100 150 200 0 2 4 6 8 r ds(on) (m w ww w ) -i d (a) figure 3: on - resistance vs. drain current and gate v gs =-10v v gs =-4.5v v gs =-2.5v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =-4.5v i d =-2a v gs =-10v i d =-4a v gs =-2.5v i d =-1a figure 3: on - resistance vs. drain current and gate voltage figure 4: on - resistance vs. junction temperature 0 50 100 150 200 250 300 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-4a 25 c 125 c 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c rev0: dec. 2012 www.aosmd.com page 3 of 6
AON2707 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics v ds =-15v i d =-4a 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 10000 1e-06 0.0001 0.01 1 100 10000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =85 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d figure 10: single pulse power rating junction - to - ambient (note e) figure 9: maximum forward biased safe operating area (note e) rev0: dec. 2012 www.aosmd.com page 4 of 6
AON2707 typical electrical and thermal characteristics 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 i f (amps) v f (v) figure 12: schottky forward characteristics 25 c 125 c 0 40 80 120 160 200 0 5 10 15 20 capacitance (pf) v ka (volts) figure 13: schottky capacitance characteristics 0.24 0.27 0.30 0.33 0.36 0.39 0.42 0 25 50 75 100 125 150 v f (volts) temperature ( c) i f =1a i f =0.5a 0.01 0.1 1 10 0 25 50 75 100 125 150 leakage current (ma) v ka =20v v ka =16v 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: schottky normalized maximum transient th ermal impedance (note e) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =87 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d temperature ( c) figure 14: schottky forward drop vs. junction temperature temperature (c) figure 15: schottky leakage current vs. junction temperature rev0: dec. 2012 www.aosmd.com page 5 of 6
AON2707 AON2707 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v dut l vgs diode recovery test circuit & waveforms vds - vds + rr q = - idt t rr -isd -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) ig vgs - + vdc l isd vds - di/dt rm vdd vdd t rr -isd -vds f -i -i rev0: dec. 2012 www.aosmd.com page 6 of 6
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